White light devices using non-polar or semipolar gallium containing materials and phosphors

ABSTRACT

A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/360,535, filed on Jan. 27, 2012, now allowed, which is a continuationof U.S. application Ser. No. 12/534,829, filed on Aug. 3, 2009, whichissued as U.S. Pat. No. 8,124,996, which claims the benefit of U.S.Provisional Application No. 61/086,139, filed on Aug. 4, 2008, which isincorporated by reference in its entirety for all purposes.

BACKGROUND OF THE INVENTION

The present invention relates generally to lighting techniques. Morespecifically, embodiments of the invention include techniques forcombining colored LED devices, such as violet, blue, blue and yellow, orblue and green, fabricated on bulk semipolar or nonpolar materials withuse of entities such as phosphors, which emit light. Merely by way ofexample, the invention can be applied to applications such as whitelighting, multi-colored lighting, general illumination, decorativelighting, automotive and aircraft lamps, street lights, lighting forplant growth, indicator lights, lighting for flat panel displays, otheroptoelectronic devices, and the like.

In the late 1800's, Thomas Edison invented the light bulb. Theconventional light bulb, commonly called the “Edison bulb,” has beenused for over one hundred years. The conventional light bulb uses atungsten filament enclosed in a glass bulb sealed in a base, which isscrewed into a socket. The socket is coupled to an AC power or DC powersource. The conventional light bulb can be found commonly in houses,buildings, and outdoor lightings, and other areas requiring light.Unfortunately, drawbacks exist with the conventional Edison light bulb.That is, the conventional light bulb dissipates much thermal energy.More than 90% of the energy used for the conventional light bulbdissipates as thermal energy. Additionally, the conventional light bulbroutinely fails often due to thermal expansion and contraction of thefilament element.

To overcome some of the drawbacks of the conventional light bulb,fluorescent lighting has been developed. Fluorescent lighting uses anoptically clear tube structure filled with a halogen gas and, whichtypically also contains mercury. A pair of electrodes is coupled betweenthe halogen gas and couples to an alternating power source through aballast. Once the gas has been excited, it discharges to emit light.Typically, the optically clear tube is coated with phosphors, which areexcited by the light. Many building structures use fluorescent lightingand, more recently, fluorescent lighting has been fitted onto a basestructure, which couples into a standard socket.

Solid state lighting techniques have also been used. Solid statelighting relies upon semiconductor materials to produce light emittingdiodes, commonly called LEDs. At first, red LEDs were demonstrated andintroduced into commerce. Red LEDs use Aluminum Indium Gallium Phosphideor AlInGaP semiconductor materials. Most recently, Shuji Nakamurapioneered the use of InGaN materials to produce LEDs emitting light inthe blue color range for blue LEDs. The blue colored LEDs led toinnovations such as solid state white lighting, the blue laser diode,which in turn enabled the Blu-Ray™ (trademark of the Blu-Ray DiscAssociation) DVD player, and other developments. Other colored LEDs havealso been proposed.

High intensity UV, blue, and green LEDs based on GaN have been proposedand even demonstrated with some success. Efficiencies have typicallybeen highest in the UV-violet, dropping off as the emission wavelengthincreases to blue or green. Unfortunately, achieving high intensity,high-efficiency GaN-based green LEDs has been particularly problematic.The performance of optoelectronic devices fabricated on conventionalc-plane GaN suffer from strong internal polarization fields, whichspatially separate the electron and hole wave functions and lead to poorradiative recombination efficiency. Since this phenomenon becomes morepronounced in InGaN layers with increased indium content for increasedwavelength emission, extending the performance of UV or blue GaN-basedLEDs to the blue-green or green regime has been difficult. Furthermore,since increased indium content films often require reduced growthtemperature, the crystal quality of the InGaN films is degraded. Thedifficulty of achieving a high intensity green LED has lead scientistsand engineers to the term “green gap” to describe the unavailability ofsuch green LED. In addition, the light emission efficiency of typicalGaN-based LEDs drops off significantly at higher current densities, asare required for general illumination applications, a phenomenon knownas “roll-over.” Other limitations with blue LEDs using c-plane GaNexist. These limitations include poor yields, low efficiencies, andreliability issues. Although highly successful, solid state lightingtechniques must be improved for full exploitation of their potential.These and other limitations may be described throughout the presentspecification and more particularly below.

From the above, it is seen that techniques for improving optical devicesis highly desired.

BRIEF SUMMARY OF THE INVENTION

The present invention provides a packaged light emitting device whichincludes a substrate member having a surface region. One or more lightemitting diode devices are overlying the surface region. At least one ofthe light emitting diode device is fabricated on a semipolar or nonpolargallium and nitrogen (e.g., GaN) containing substrate. The lightemitting diode devices are fabricated on the semipolar or nonpolargallium and nitrogen (e.g., GaN) containing substrate and emitsubstantially polarized emission of first wavelengths. In a specificembodiment, the device also has an optically transparent member coupledto the light emitting diode devices. An optical path is provided betweenthe light emitting diode devices and the optically transparent member.In a specific embodiment, the phosphors are formed near or overlying theoptically transparent member. Alternatively, the phosphors are formedwithin the optically transparent member or underlying the opticallytransparent member or any combination of these configurations. Theentities are excited by the substantially polarized emission, which isdirect or reflected or a combination to emit electromagnetic radiationsecond wavelengths.

In a specific embodiment, the present invention includes deviceconfigurations having different spatial locations for the thickness ofthe entities. The thickness of the entities is formed within theoptically transparent member. Alternatively, the thickness of theentities is formed underlying the optically transparent member accordingto a specific embodiment. In yet an alternative specific embodiment, thethickness of the entities is formed within a spatial region of the lightpath between the light emitting diode devices and the opticallytransparent member.

In yet an alternative specific embodiment, the present inventionprovides a packaged light emitting device. The device includes asubstrate member having a surface region and light emitting diodedevices overlying the surface region. At least one of the light emittingdiode device is fabricated on a semipolar or nonpolar gallium andnitrogen (e.g., GaN) containing substrate. The light emitting diodedevices are fabricated on the semipolar or nonpolar gallium and nitrogen(e.g., GaN) containing substrate and emit substantially polarizedemission of first wavelengths. At least one of the light emitting diodedevices comprises a quantum well region, which is characterized by anelectron wave function and a hole wave function. In a specificembodiment, the electron wave function and the hole wave function aresubstantially overlapped within a predetermined spatial region of thequantum well region. The device has a thickness of entities formedoverlying the light emitting diode devices. The entities are excited bythe substantially polarized emission to emit electromagnetic radiationof second wavelengths.

Still further, the present invention provides a packaged light emittingdevice. The device includes a substrate member having a surface region.The device includes light emitting diode devices overlying the surfaceregion. At least one of the light emitting diode device is fabricated ona semipolar or nonpolar gallium and nitrogen (e.g., GaN) containingsubstrate and emit substantially polarized emissions of firstwavelengths. At least one of the light emitting diode devices includes aquantum well region, which is characterized by an electron wave functionand a hole wave. The electron wave function and the hole wave functionare substantially overlapped within a predetermined spatial region ofthe quantum well region. The device also has a thickness of entitiesoperably coupled to the light emitting diode devices. In a specificembodiment, the entities are excited by the substantially polarizedemission and emit electromagnetic radiation of second wavelengths.Depending upon the embodiment, the entities are formed overlying thelight emitting diode devices, or within a vicinity of the light emittingdevices. The electromagnetic radiation is characterized by reflectedemission, direct emission, or a combination of reflected and directemission.

In yet an alternative embodiment, the present invention provides amethod of assembling a light emitting device. The method includesproviding a substrate member comprising a surface region. The methodalso includes providing light emitting diode devices overlying thesurface region. At least one of the light emitting diode device isfabricated on a semipolar or nonpolar gallium and nitrogen containingsubstrate. The light emitting diode devices are fabricated on thesemipolar or nonpolar gallium and nitrogen containing substrate and emitsubstantially polarized emission of first wavelengths. At least one ofthe light emitting diode devices comprises a quantum well region, whichis characterized by an electron wave function and a hole wave function.The electron wave function and the hole wave function are substantiallyoverlapped within a predetermined spatial region of the quantum wellregion. The method includes coupling a thickness of entities to thelight emitting diode devices. The entities are excited by thesubstantially polarized emission, and emit electromagnetic radiation ofsecond wavelengths.

The present device and method provides for an improved lightingtechnique with improved efficiencies. The present method and resultingstructure are easier to implement using conventional technologies. Insome embodiments, the present device and method provide a mix ofpolarized and unpolarized light that are useful in displays and inconjunction with polarizing transmission filters. In a specificembodiment, the blue LED device is capable of emitting electromagneticradiation at a wavelength range from about 450 nanometers to about 495nanometers, and the yellow-green LED device is capable of emittingelectromagnetic radiation at a wavelength range from about 495nanometers to about 590 nanometers, although there can also be somevariations.

A further understanding of the nature and advantages of the presentinvention may be realized by reference to the latter portions of thespecification and attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified diagram of a packaged light emitting device usinga recessed configuration according to an embodiment of the presentinvention;

FIG. 1A illustrates an electron/hole wave functions according to anembodiment of the present invention;

FIGS. 2 through 5 illustrate a simplified method of assembling the lightemitting device of FIG. 1 according to an embodiment of the presentinvention;

FIG. 6 is a simplified diagram of an alternative packaged light emittingdevice using multiple devices according to an embodiment of the presentinvention;

FIGS. 7 through 10 illustrate a simplified method of assembling thelight emitting device of FIG. 6 according to an embodiment of thepresent invention;

FIG. 11 is a simplified diagram of yet an alternative packaged lightemitting device using an optical path to a plane region according to anembodiment of the present invention;

FIGS. 12 through 15 illustrate a simplified method of assembling thelight emitting device of FIG. 11 according to an embodiment of thepresent invention;

FIG. 16 is a simplified diagram of a yet an alternative packaged lightemitting device using an optical path to a plane region and fillermaterial according to an embodiment of the present invention;

FIGS. 17 through 20 illustrate a simplified method of assembling thelight emitting device of FIG. 16 according to an embodiment of thepresent invention;

FIG. 21 is a simplified diagram of a yet an alternative packaged lightemitting device using an optical path to a plane region according to anembodiment of the present invention; and

FIG. 22 is a simplified diagram of a yet an alternative packaged lightemitting device using an optical path to a plane region according to anembodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Recent breakthroughs in the field of GaN-based optoelectronics havedemonstrated the great potential of devices fabricated on bulk nonpolarand semipolar GaN substrates. The lack of strong polarization inducedelectric fields that plague conventional devices on c-plane GaN leads toa greatly enhanced radiative recombination efficiency in the lightemitting InGaN layers. Furthermore, the nature of the electronic bandstructure and the anisotropic in-plane strain leads to highly polarizedlight emission, which will offer several advantages in applications suchas display backlighting.

Of particular importance to the field of lighting is the progress oflight emitting diodes (LED) fabricated on nonpolar and semipolar GaNsubstrates. Such devices making use of InGaN light emitting layers haveexhibited record output powers at extended operation wavelengths intothe violet region (390-430 nm), the blue region (430-490 nm), the greenregion (490-560 nm), and the yellow region (560-600 nm). For example, aviolet LED, with a peak emission wavelength of 402 nm, was recentlyfabricated on an m-plane (1-100) GaN substrate and demonstrated greaterthan 45% external quantum efficiency, despite having no light extractionenhancement features, and showed excellent performance at high currentdensities, with minimal roll-over [K.-C. Kim, M. C. Schmidt, H. Sato, F.Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S, Nakamura, and S. P.DenBaars, “Improved electroluminescence on nonpolar m-plane InGaN/GaNquantum well LEDs”, Phys. Stat. Sol. (RRL) 1, No. 3, 125 (2007).].Similarly, a blue LED, with a peak emission wavelength of 468 nm,exhibited excellent efficiency at high power densities and significantlyless roll-over than is typically observed with c-plane LEDs [K. Iso, H.Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J.S. Speck, and S, Nakamura, “High brightness blue InGaN/GaN lightemitting diode on nonpolar m-plane bulk GaN substrate”, Japanese Journalof Applied Physics 46, L960 (2007).]. Two promising semipolarorientations are the (10-1-1) and (11-22) planes. These planes areinclined by 62.0 degrees and by 58.4 degrees, respectively, with respectto the c-plane. University of California, Santa Barbara (UCSB) hasproduced highly efficient LEDs on (10-1-1) GaN with over 65 mW outputpower at 100 mA for blue-emitting devices [H. Zhong, A. Tyagi, N.Fellows, F. Wu, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P.DenBaars, and S, Nakamura, “High power and high efficiency blue lightemitting diode on freestanding semipolar (1011) bulk GaN substrate”,Applied Physics Letters 90, 233504 (2007)] and on (11-22) GaN with over35 mW output power at 100 mA for blue-green emitting devices [H. Zhong,A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck,S. P. DenBaars, and S, Nakamura, Electronics Lett. 43, 825 (2007)], over15 mW of power at 100 mA for green-emitting devices [H. Sato, A. Tyagi,H. Zhong, N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S.P. DenBaars, and S, Nakamura, “High power and high efficiency greenlight emitting diode on free-standing semipolar (1122) bulk GaNsubstrate”, Physical Status Solid—Rapid Research Letters 1, 162 (2007)]and over 15 mW for yellow devices [H. Sato, R. B. Chung, H. Hirasawa, N.Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P.DenBaars, and S, Nakamura, “Optical properties of yellow light-emittingdiodes grown on semipolar (1122) bulk GaN substrates,” Applied PhysicsLetters 92, 221110 (2008).]. The UCSB group has shown that the indiumincorporation on semipolar (11-22) GaN is comparable to or greater thanthat of c-plane GaN, which provides further promise for achieving highcrystal quality extended wavelength emitting InGaN layers.

With high-performance single-color non-polar and semi-polar LEDs,several types of white light sources are now possible. In oneembodiment, a violet non-polar or semi-polar LED is packaged togetherwith at least one phosphor. In a preferred embodiment, the phosphorcomprises a blend of three phosphors, emitting in the blue, the green,and the red. In another embodiment, a blue non-polar or semi-polar LEDis packaged together with at least one phosphor. In a preferredembodiment, the phosphor comprises a blend of two phosphors, emitting inthe green and the red. In still another embodiment, a green or yellownon-polar or semi-polar LED is packaged together with a blue LED and atleast one phosphor. In a preferred embodiment, the phosphor emits in thered. In a preferred embodiment, the blue LED constitutes a bluenon-polar or semi-polar LED.

A non-polar or semi-polar LED may be fabricated on a bulk galliumnitride substrate. The gallium nitride substrate may be sliced from aboule that was grown by hydride vapor phase epitaxy or ammonothermally,according to methods known in the art. In one specific embodiment, thegallium nitride substrate is fabricated by a combination of hydridevapor phase epitaxy and ammonothermal growth, as disclosed in U.S.Patent Application No. 61/078,704, commonly assigned, and herebyincorporated by reference herein. The boule may be grown in thec-direction, the m-direction, the a-direction, or in a semi-polardirection on a single-crystal seed crystal. Semipolar planes may bedesignated by (hkil) Miller indices, where i=−(h+k), l is nonzero and atleast one of h and k are nonzero. The gallium nitride substrate may becut, lapped, polished, and chemical-mechanically polished. The galliumnitride substrate orientation may be within ±5 degrees, ±2 degrees, ±1degree, or ±0.5 degrees of the {1 −1 0 0} m plane, the {1 1 −2 0} aplane, the {1 1 −2 2} plane, the {2 0 −2 ±1} plane, the {1 −1 0 ±1}plane, the {1 −1 0 ±2} plane, or the {1 −1 0 ±3} plane. The galliumnitride substrate may have a dislocation density in the plane of thelarge-area surface that can be less than 10⁶ cm⁻² and is usually lessthan 10³ cm⁻². The gallium nitride substrate may have a dislocationdensity in the c plane that can be less than 10⁶ cm⁻² and is preferablyless than 10³ cm⁻².

A homoepitaxial non-polar or semi-polar LED is fabricated on the galliumnitride substrate according to methods that are known in the art, forexample, following the methods disclosed in U.S. Pat. No. 7,053,413,which is hereby incorporated by reference in its entirety. At least oneAl_(x)In_(y)Ga_(1-x-y)N layer, where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1, isdeposited on the substrate, for example, following the methods disclosedby U.S. Pat. Nos. 7,338,828 and 7,220,324, which are hereby incorporatedby reference in their entirety. The at least one Al_(x)In_(y)Ga_(1-x-y)Nlayer may be deposited by metal-organic chemical vapor deposition, bymolecular beam epitaxy, by hydride vapor phase epitaxy, or by acombination thereof. In one embodiment, the Al_(x)In_(y)Ga_(1-x-y)Nlayer comprises an active layer that preferentially emits light when anelectrical current is passed through it. In one specific embodiment, theactive layer comprises a single quantum well, with a thickness betweenabout 0.5 nm and about 40 nm. In a specific embodiment, the active layercomprises a single quantum well with a thickness between about 1 nm andabout 5 nm. In other embodiments, the active layer comprises a singlequantum well with a thickness between about 5 nm and about 10 nm,between about 10 nm and about 15 nm, between about 15 nm and about 20nm, between about 20 nm and about 25 nm, between about 25 nm and about30 nm, between about 30 nm and about 35 nm, or between about 35 nm andabout 40 nm. In another set of embodiments, the active layer comprises amultiple quantum well. In still another embodiment, the active regioncomprises a double heterostructure, with a thickness between about 40 nmand about 500 nm. In one specific embodiment, the active layer comprisesan In_(y)Ga_(1-y)N layer, where 0≦y≦1.

In a specific embodiment, the present invention provides novel packagesand devices including at least one non-polar or at least one semi-polarhomoepitaxial LED placed on a substrate. The present packages anddevices are combined with phosphors to discharge white light.

FIG. 1 is a simplified diagram of a packaged light emitting device 100using a recessed configuration according to an embodiment of the presentinvention. In a specific embodiment, the present invention provides apackaged light emitting device 100. As shown, the device has a substratemember having a surface region made of a suitable material such a metalincluding, but not limited to, Alloy 42, copper, plastics, dielectrics,and the like. The substrate is generally a lead frame member such asmetal alloy.

The substrate, which holds the LED, can come in various shapes, sizes,and configurations. In a specific embodiment, the surface region ofsubstrate 101 is cupped. Alternatively, the surface region 101 isrecessed The surface region generally comprises a smooth surface,plating, or coating. Such plating or coating can be gold, silver,platinum, aluminum, or any pure or alloy material, which is suitable forbonding to an overlying semiconductor material, but can be others.

Referring again to FIG. 1, the device has light emitting diode devicesoverlying the surface region. At least one of the light emitting diodedevices 103 is fabricated on a semipolar or nonpolar GaN containingsubstrate. In a specific embodiment, the device emits polarizedelectromagnetic radiation 105. As shown, the light emitting device iscoupled to a first potential, which is attached to the substrate, and asecond potential 109, which is coupled to wire or lead 111 bonded to alight emitting diode. Preferably at least one of the light emittingdiode devices includes a quantum well region characterized by anelectron wave function and a hole wave function. The electron wavefunction and the hole wave function are substantially overlapped withina predetermined spatial region of the quantum well region. An example ofthe electron wave function and the hole wave function is provided byFIG. 1A, but can be others.

In a preferred embodiment, the light emitting diode devices comprise atleast a blue LED device which emits substantially polarized emission isblue light at a range from about 430 nanometers to about 490 nanometers.In a specific embodiment, a {1 −1 0 0} m-plane bulk substrate isprovided for the nonpolar blue LED. In another specific embodiment, a {10 −1 −1} semi-polar bulk substrate is provided for the semipolar blueLED. The substrate has a flat surface, with a root-mean-square (RMS)roughness of about 0.1 nm, a threading dislocation density less than5×10⁶ cm⁻², and a carrier concentration of about 1×10¹⁷ cm⁻³. Epitaxiallayers are deposited on the substrate by metalorganic chemical vapordeposition (MOCVD) at atmospheric pressure. The ratio of the flow rateof the group V precursor (ammonia) to that of the group III precursor(trimethyl gallium, trimethyl indium, trimethyl aluminum) during growthis between about 3000 and about 12000. First, a contact layer of n-type(silicon-doped) GaN is deposited on the substrate, with a thickness ofabout 5 microns and a doping level of about 2×10¹⁸ cm⁻³. Next, anundoped InGaN/GaN multiple quantum well (MQW) is deposited as the activelayer. The MQW superlattice has six periods, comprising alternatinglayers of 8 nm of InGaN and 37.5 nm of GaN as the barrier layers. Next,a 10 nm undoped AlGaN electron blocking layer is deposited. Finally, ap-type GaN contact layer is deposited, with a thickness of about 200 nmand a hole concentration of about 7×10¹⁷ cm⁻³. Indium tin oxide (ITO) ise-beam evaporated onto the p-type contact layer as the p-type contactand rapid-thermal-annealed. LED mesas, with a size of about 300×300 μm²,are formed by photolithography and dry etching using a chlorine-basedinductively-coupled plasma (ICP) technique. Ti/Al/Ni/Au is e-beamevaporated onto the exposed n-GaN layer to form the n-type contact,Ti/Au is e-beam evaporated onto a portion of the ITO layer to form ap-contact pad, and the wafer is diced into discrete LED dies. Electricalcontacts are formed by conventional wire bonding. In a specificembodiment, the present device also has a thickness 115 of preferablyphosphor entities formed overlying light emitting diode devices. Theentities are excited by the substantially polarized emission and emitelectromagnetic radiation of second wavelengths. In a preferredembodiment, the emit substantially yellow light from an interaction withthe substantially polarized emission of blue light. Preferably theentities are phosphor entities about five microns or less thick.

In a specific embodiment, the entities comprises a phosphor or phosphorblend selected from one or more of(Y,Gd,Tb,Sc,Lu,La)₃(Al,Ga,In)₅O₁₂:Ce³⁺, SrGa₂S₄:Eu²⁺, SrS:Eu²⁺, andcolloidal quantum dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe,or CdTe. In other embodiments, the device may include a phosphor capableof emitting substantially red light. Such phosphor is selected from oneor more of (Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x≦0.1 and 0.001<y<0.1;(Y,Gd,Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆, where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x) Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)Xwherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the light emitting diode device includes atleast a violet LED device capable of emitting electromagnetic radiationat a range from about 380 nanometers to about 440 nanometers and the oneor more entities are capable of emitting substantially white light, thesubstantially polarized emission being violet light. In a specificembodiment, a (1 −1 0 0) m-plane bulk substrate is provided for thenonpolar violet LED. The substrate has a flat surface, with aroot-mean-square (RMS) roughness of about 0.1 nm, a threadingdislocation density less than 5×10⁶ cm⁻², and a carrier concentration ofabout 1×10¹⁷ cm⁻³. Epitaxial layers are deposited on the substrate bymetalorganic chemical vapor deposition (MOCVD) at atmospheric pressure.The ratio of the flow rate of the group V precursor (ammonia) to that ofthe group III precursor (trimethyl gallium, trimethyl indium, trimethylaluminum) during growth is between about 3000 and about 12000. First, acontact layer of n-type (silicon-doped) GaN is deposited on thesubstrate, with a thickness of about 5 microns and a doping level ofabout 2×10¹⁸ cm⁻³. Next, an undoped InGaN/GaN multiple quantum well(MQW) is deposited as the active layer. The MQW superlattice has sixperiods, comprising alternating layers of 16 nm of InGaN and 18 nm ofGaN as the barrier layers. Next, a 10 nm undoped AlGaN electron blockinglayer is deposited. Finally, a p-type GaN contact layer is deposited,with a thickness of about 160 nm and a hole concentration of about7×10¹⁷ cm⁻³. Indium tin oxide (ITO) is e-beam evaporated onto the p-typecontact layer as the p-type contact and rapid-thermal-annealed. LEDmesas, with a size of about 300×300 μm², are formed by photolithographyand dry etching. Ti/Al/Ni/Au is e-beam evaporated onto the exposed n-GaNlayer to form the n-type contact, Ti/Au is e-beam evaporated onto aportion of the ITO layer to form a contact pad, and the wafer is dicedinto discrete LED dies. Electrical contacts are formed by conventionalwire bonding. Other colored LEDs may also be used or combined accordingto a specific embodiment.

In a specific embodiment, a (1 1 −2 2} bulk substrate is provided for asemipolar green LED. The substrate has a flat surface, with aroot-mean-square (RMS) roughness of about 0.1 nm, a threadingdislocation density less than 5×10⁶ cm⁻², and a carrier concentration ofabout 1×10¹⁷ cm⁻³. Epitaxial layers are deposited on the substrate bymetalorganic chemical vapor deposition (MOCVD) at atmospheric pressure.The ratio of the flow rate of the group V precursor (ammonia) to that ofthe group III precursor (trimethyl gallium, trimethyl indium, trimethylaluminum) during growth between about 3000 and about 12000. First, acontact layer of n-type (silicon-doped) GaN is deposited on thesubstrate, with a thickness of about 1 micron and a doping level ofabout 2×10¹⁸ cm⁻³. Next, an InGaN/GaN multiple quantum well (MQW) isdeposited as the active layer. The MQW superlattice has six periods,comprising alternating layers of 4 nm of InGaN and 20 nm of Si-doped GaNas the barrier layers and ending with an undoped 16 nm GaN barrier layerand a 10 nm undoped Al_(0.15)Ga_(0.85)N electron blocking layer.Finally, a p-type GaN contact layer is deposited, with a thickness ofabout 200 nm and a hole concentration of about 7×10¹⁷ cm⁻³. Indium tinoxide (ITO) is e-beam evaporated onto the p-type contact layer as thep-type contact and rapid-thermal-annealed. LED mesas, with a size ofabout 200×550 μm², are formed by photolithography and dry etching.Ti/Al/Ni/Au is e-beam evaporated onto the exposed n-GaN layer to formthe n-type contact, Ti/Au is e-beam evaporated onto a portion of the ITOlayer to form a contact pad, and the wafer is diced into discrete LEDdies. Electrical contacts are formed by conventional wire bonding.

In another specific embodiment, a (1 1 −2 2} bulk substrate is providedfor a semipolar yellow LED. The substrate has a flat surface, with aroot-mean-square (RMS) roughness of about 0.1 nm, a threadingdislocation density less than 5×10⁶ cm⁻², and a carrier concentration ofabout 1×10¹⁷ cm⁻³. Epitaxial layers are deposited on the substrate bymetalorganic chemical vapor deposition (MOCVD) at atmospheric pressure.The ratio of the flow rate of the group V precursor (ammonia) to that ofthe group III precursor (trimethyl gallium, trimethyl indium, trimethylaluminum) during growth between about 3000 and about 12000. First, acontact layer of n-type (silicon-doped) GaN is deposited on thesubstrate, with a thickness of about 2 microns and a doping level ofabout 2×10¹⁸ cm⁻³. Next, a single quantum well (SQW) is deposited as theactive layer. The SQW comprises a 3.5 nm InGaN layer and is terminatedby an undoped 16 nm GaN barrier layer and a 7 nm undopedAl_(0.15)Ga_(0.85)N electron blocking layer. Finally, a Mg-doped p-typeGaN contact layer is deposited, with a thickness of about 200 nm and ahole concentration of about 7×10¹⁷ cm⁻³. Indium tin oxide (ITO) ise-beam evaporated onto the p-type contact layer as the p-type contactand rapid-thermal-annealed. LED mesas, with a size of about 600×450 μm²,are formed by photolithography and dry etching. Ti/Al/Ni/Au is e-beamevaporated onto the exposed n-GaN layer to form the n-type contact,Ti/Au is e-beam evaporated onto a portion of the ITO layer to form acontact pad, and the wafer is diced into discrete LED dies. Electricalcontacts are formed by conventional wire bonding.

In a specific embodiment, the one or more entities comprise a blend ofphosphors capable of emitting substantially blue light, substantiallygreen light, and substantially red light. As an example, the blueemitting phosphor is selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺, Mn²⁺; Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺, Mn²⁺;(Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺; 2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺;Sr₂Si₃O₈*2SrCl₂:Eu²⁺; (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺(SAE); BaAl₈O₁₃:Eu²⁺; and mixtures thereof. As an example, the greenphosphor is selected from the group consisting of(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺, Tb³⁺; Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺;(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,ln)₂S₄:Eu²⁺; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺, Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof. As an example, thered phosphor is selected from the group consisting of(Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x≦0.1 and 0.001<y<0.1;(Y,Gd,Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

The above has been generally described in terms of entities that arephosphor materials or phosphor like materials, but it would berecognized that other “energy-converting luminescent materials”, whichmay include phosphors, semiconductors, semiconductor nanoparticles(“quantum dots”), organic luminescent materials, and the like, andcombinations of them, can also be used. More generally the energyconverting luminescent materials can be wavelength converting materialand/or materials.

In a specific embodiment, the present packaged device includes anenclosure 117. The enclosure can be made of a suitable material such asan optically transparent plastic, glass, or other material. As alsoshown, the enclosure has a suitable shape 119. The shape can be annular,circular, egg-shaped, trapezoidal, or a combination of these shapes.Depending upon the embodiment, the enclosure with suitable shape andmaterial is configured to facilitate and even optimize transmission ofelectromagnetic radiation from the LED device with coating through thesurface region of the enclosure. FIGS. 2 through 5 illustrate a methodof assembling the light emitting device of FIG. 1 according to anembodiment of the present invention. The method includes providing asubstrate member 101 comprising a surface region. In a specificembodiment, the substrate is made of a suitable material such a metalincluding, but not limited to, Alloy 42, copper, dielectrics, plastics,or others. In a specific embodiment, the substrate is generally from alead frame member such as a metal alloy, but can be others.

In a specific embodiment, the present substrate, which holds the LED,can come in various shapes, sizes, and configurations. In a specificembodiment, the surface region of substrate 101 is cupped.Alternatively, the surface region 101 is recessed according to aspecific embodiment. Additionally, the surface region is generally asmooth surface, plating, or coating. Such plating or coating can begold, silver, platinum, aluminum, or any pure or alloy material, whichis suitable for bonding to an overlying semiconductor material, but canbe others.

In a specific embodiment, the method includes providing one or morelight emitting diode devices overlying the surface region. At least oneof the light emitting diode devices 103 is fabricated on a semipolar ornonpolar GaN containing substrate. In a specific embodiment, the deviceemits polarized electromagnetic radiation 105. As shown, the lightemitting device is coupled to a first potential, which is attached tothe substrate, and a second potential 109, which is coupled to wire orlead 111 bonded to a light emitting diode. The light emitting diodedevice comprises at least a blue LED device which emits substantiallypolarized emission blue light at a range from about 430 nanometers toabout 490 nanometers.

In a specific embodiment, the LED device is attached onto the surfaceregion of the substrate by silver paste, eutectic, gold eutectic, orother suitable techniques. In a preferred embodiment, the LED device isattached using die attach methods such as eutectic bonding of metalssuch as gold, silver, or platinum, among others.

Referring now to FIG. 3, the present method includes bonding wiring 115from lead 109 to a bonding pad on the LED device. In a specificembodiment, the wire is a suitable material such as gold, aluminum, orothers and is bonded using ultrasonic, megasonic, or techniques.

Referring now to FIG. 4, the method includes providing a thickness 115of one or more entities formed overlying the light emitting diodedevices. In a specific embodiment, the entities are excited by thesubstantially polarized emission and emit electromagnetic radiation ofsecond wavelengths. In a preferred embodiment, the plurality of entitiesemit substantially yellow light from an interaction with thesubstantially polarized emission of blue light. In a specificembodiment, the thickness of the plurality of entities, which arephosphor entities, is about five microns or less.

In a specific embodiment, the entities comprises a phosphor or phosphorblend selected from one or more of(Y,Gd,Tb,Sc,Lu,La)₃(Al,Ga,In)₅O₁₂:Ce³⁺, SrGa₂S₄:Eu²⁺, SrS:Eu²⁺, andcolloidal quantum dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe,or CdTe. In other embodiments, the device may include a phosphor capableof emitting substantially red light. Such phosphor is be selected from(Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1;(Y,Gd,Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)Xwherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the one or more entities comprise a blend ofphosphors capable of emitting substantially blue light, substantiallygreen light, and substantially red light. As an example, the blueemitting phosphor is selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺, Mn²⁺; Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺, Mn²⁺;(Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺; 2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺;Sr₂Si₃O₈*2SrCl₂:Eu²⁺; (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺(SAE); BaAl₈O₁₃:Eu²⁺; and mixtures thereof. As an example, the greenphosphor is selected from the group consisting of(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺, Tb³⁺; Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺;(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,ln)₂S₄:Eu²⁺; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺, Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof. As an example, thered phosphor is selected from the group consisting of(Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1;(Y,Gd,Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆, where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the entities are coated onto the surfaceregion of the LED device using a suitable technique. Such technique caninclude deposition, spraying, plating, coating, spin coating,electrophoretic deposition, sputtering, dipping, dispensing,sedimentation, ink jet printing, and screen printing. The deposition canuse an electrostatic technique to provide for uniformity and a highquality coating. In a specific embodiment, the entities have auniformity between about 10 percent and about 0.1 percent. In someembodiments, the entities are coated onto the surface region of the LEDdevice prior to its separation from a wafer into discrete dies.

In a specific embodiment, the present method includes providing anenclosure 117 overlying the LED device, which has been mounted, bonded,and coated. The enclosure can be made of a suitable material such as anoptically transparent plastic, glass, or other material. As also shown,the enclosure has a suitable shape 119. The shape can be annular,circular, egg-shaped, trapezoidal, or a combination of these shapes.Depending upon the embodiment, the enclosure is configured to facilitateand even optimize transmission of electromagnetic radiation from the LEDdevice with coating through the surface region of the enclosure. FIG. 6is a simplified diagram of an alternative packaged light emitting device600 using multiple devices according to an embodiment of the presentinvention. In a specific embodiment, the present invention provides apackaged light emitting device 600 which has a substrate member with asurface region. In a specific embodiment, the substrate is made of asuitable material such a metal including, but not limited to, Alloy 42,copper, or others, including dielectrics and even plastics. In aspecific embodiment, the substrate is generally from a lead frame membersuch as metal alloy.

The substrate, which holds the LED, can come in various shapes, sizes,and configurations. In a specific embodiment, the surface region ofsubstrate 601 is cupped. Alternatively, the surface region 601 isrecessed. The surface region generally has a smooth surface, plating, orcoating. Such plating or coating can be gold, silver, platinum,aluminum, or any pure or alloy material, which is suitable for bondingto an overlying semiconductor material, but can be others.

Referring again to FIG. 6, the device has light emitting diode devicesoverlying the surface region. At least one of the light emitting diodedevices 103 is fabricated on a semipolar or nonpolar GaN containingsubstrate. The device emits polarized electromagnetic radiation. Asshown, the light emitting device is coupled to a first potential, whichis attached to the substrate, and a second potential 610, which iscoupled to wire or lead 611 bonded to a light emitting diode.

In a specific embodiment, at least one of the light emitting diodedevices provides a quantum well region. The quantum well region ischaracterized by an electron wave function and a hole wave functionwhich are substantially overlapped within a predetermined spatial regionof the quantum well region according to a specific embodiment.

In a preferred embodiment, the light emitting diode device comprises atleast a blue LED and the substantially polarized emission is blue lightat a range from about 430 nanometers to about 490 nanometers.

The device has a thickness 115 of one or more which are excited by thesubstantially polarized emission and emit electromagnetic radiation atsecond wavelengths. In a preferred embodiment, the plurality of entitiesis emit substantially yellow light from an interaction with thesubstantially polarized emission of blue light. In a specificembodiment, the thickness of the plurality of entities, which arephosphor entities, is about five microns or less.

In a specific embodiment, the one or more entities comprises a phosphoror phosphor blend selected from one or more of(Y,Gd,Tb,Sc,Lu,La)₃(Al,Ga,In)₅O₁₂:Ce³⁺, SrGa₂S₄:Eu²⁺, SrS:Eu²⁺, andcolloidal quantum dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe,or CdTe. In other embodiments, the device may include a phosphor capableof emitting substantially red light. Such phosphor is be selected from(Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn₄+(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1;(Y,Gd,Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)Xwherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the light emitting diode device comprises atleast a violet LED device capable of emitting electromagnetic radiationat a range from about 380 nanometers to about 440 nanometers, and theone or more entities are capable of emitting substantially white light.Other colored LEDs may also be used or combined according to a specificembodiment.

In a specific embodiment, the one or more entities comprise a blend ofphosphors capable of emitting substantially blue light, substantiallygreen light, and substantially red light. As an example, the blueemitting phosphor is selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺, Mn²⁺; Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺, Mn²⁺;(Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺; 2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺;Sr₂Si₃O₈*2SrCl₂:Eu²⁺; (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺(SAE); BaAl₈O₁₃:Eu²⁺; and mixtures thereof. As an example, the greenphosphor is selected from the group consisting of(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺,Tb³⁺; Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺;(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,ln)₂S₄:Eu²⁺; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺, Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof. As an example, thered phosphor is selected from the group consisting of(Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1;(Y,Gd,Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the present packaged device includes a secondLED device 603 or possibly multiple devices. As shown, the second LEDdevice is coupled to a first potential, which is attached to thesubstrate, and a second potential 609, which is coupled to wire or lead111 bonded to the second LED device. The second LED device can be coatedwith a phosphor or remain uncoated 615. The LED device can be one of aplurality of colors including, but not limited to red, blue, green,yellow, violet, amber, cyan, and others emitting electromagneticradiation, including ultraviolet. In a specific embodiment, the LEDdevice can be made on a polar, non-polar, or semi-polar gallium nitridecontaining material. Alternatively, the LED can be made on an AlInGaP orlike material.

In other embodiments, the packaged device can include other types ofoptical and/or electronic devices. As an example, the optical devicescan be an organic light emitting diode (OLED), a laser diode, ananoparticle optical device, or others. The electronic device caninclude an integrated circuit, a transistor, a rectifier, a sensor, amicro-machined electronic mechanical system, or any combination ofthese, and the like.

In a specific embodiment, the present packaged device includes anenclosure 617. The enclosure can be made of a suitable material such asan optically transparent plastic, glass, or other material. As alsoshown, the enclosure has a suitable shape 619 which can be annular,circular, egg-shaped, trapezoidal, or a combination of these. Dependingupon the embodiment, the enclosure is configured to facilitate, and evenoptimize transmission of electromagnetic radiation from the LED devicewith coating through the surface region of the enclosure

FIGS. 7 through 10 illustrate a simplified method of assembling thelight emitting device of FIG. 6 according to an embodiment of thepresent invention.

FIG. 11 is a simplified diagram of another alternative packaged lightemitting device using an optical path to a plane region according to anembodiment of the present invention. As shown, the device has asubstrate made of a suitable material such a metal including, but notlimited to, Alloy 42, copper, dielectrics or plastics, among others. Ina specific embodiment, the substrate is generally from a lead framemember such as a metal alloy, but can be others.

The substrate, which holds the LED, can come in various shapes, sizes,and configurations. In a specific embodiment, the surface region ofsubstrate 1101 is cupped. Alternatively, the surface region 1101 isrecessed. The surface region is generally a smooth surface, plating, orcoating. Such plating or coating can be gold, silver, platinum,aluminum, or any pure or alloy material, which is suitable for bondingto an overlying semiconductor material, but can be others.

Referring again to FIG. 11, the device has light emitting diode devicesoverlying the surface region. At least one of the light emitting diodedevices 1103 is fabricated on a semipolar or nonpolar GaN containingsubstrate and emits polarized electromagnetic radiation 1105. As shown,the light emitting device is coupled to a first potential, which isattached to the substrate, and a second potential 1109, which is coupledto wire or lead 1111. One of the light emitting diode devices includes aquantum well region characterized by an electron wave function and ahole wave function which are substantially overlapped within apredetermined spatial region of the quantum well region.

In a preferred embodiment, the light emitting diode device include atleast a blue LED device which emits polarized blue light at a range fromabout 430 nanometers to about 490 nanometers.

The packaged device includes an enclosure 1117 made of a suitablematerial such as an optically transparent plastic, glass, or othermaterial. The enclosure has a suitable shape 1119 which can be annular,circular, egg-shaped, trapezoidal, or a combination of these. Dependingupon the embodiment, the enclosure with suitable shape and material isconfigured to facilitate and even optimize transmission ofelectromagnetic radiation from the LED device through the surface regionof the enclosure. The enclosure includes an interior region and anexterior region with a volume defined within the interior region. Thevolume is open and filled with an inert gas or air to provide an opticalpath between the LED device or devices and the surface region of theenclosure.

In a specific embodiment, the present packaged device also has athickness 1115 of entities formed overlying the enclosure to interactwith light from the light emitting diode devices. In a specificembodiment, the entities are excited by the substantially polarizedemission and emit electromagnetic radiation of second wavelengths. In apreferred embodiment, the plurality of entities is capable of emittingsubstantially yellow light from an interaction with the substantiallypolarized emission of blue light. In a specific embodiment, thethickness of phosphor entities is about five microns or less.

In a specific embodiment, entities comprises a phosphor or phosphorblend selected from one or more of(Y,Gd,Tb,Sc,Lu,La)₃(Al,Ga,In)₅O₁₂:Ce³⁺, SrGa₂S₄:Eu²⁺, SrS:Eu²⁺, andcolloidal quantum dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe,or CdTe. In other embodiments, the device may include a phosphor capableof emitting substantially red light. Such phosphor is be selected from(Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)Xwherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the one or more entities comprise a blend ofphosphors capable of emitting substantially blue light, substantiallygreen light, and substantially red light. As an example, the blueemitting phosphor is selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺, Mn²⁺; Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺, Mn²⁺;(Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺; 2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺;Sr₂Si₃O₈*2SrCl₂:Eu²⁺; (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺(SAE); BaAl₈O₁₃:Eu²⁺; and mixtures thereof. As an example, the greenphosphor is selected from the group consisting of(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺, Tb³⁺; Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,ln)₂S₄:Eu²; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺, Tb³⁺;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof. As an example, thered phosphor is selected from the group consisting of(Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺; Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1;(Y,Gd,Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

FIGS. 12 through 15 illustrate a simplified method of assembling thelight emitting device of FIG. 11 according to an embodiment of thepresent invention.

FIG. 16 is a simplified diagram of a yet an alternative packaged lightemitting device 1600 using an optical path to a plane region and fillermaterial according to an embodiment of the present invention. Theinvention provides a packaged light emitting device 1600 with asubstrate member having a surface region. In a specific embodiment, thesubstrate is made of a suitable material such a metal including, but notlimited to, Alloy 42, copper, dielectric, or even plastic, among others,and preferably is a lead frame member such as a metal alloy.

The substrate, which holds the LED, can come in various shapes, sizes,and configurations and can be cupped or recessed. Additionally, thesurface region is generally a smooth surface, with plating or coating.Such plating or coating can be gold, silver, platinum, or any pure oralloy material, which is suitable for bonding to an overlyingsemiconductor material, but can be others.

Referring again to FIG. 1, the device has one or more light emittingdiode devices overlying the surface region. Each light emitting diodedevice 1603 is fabricated on a semipolar or nonpolar GaN containingsubstrate and emits polarized electromagnetic radiation. As shown, thelight emitting device is coupled to a first potential, which is attachedto the substrate, and a second potential 1609, which is coupled to wireor lead 1611 bonded to a light emitting diode. At least one of the lightemitting diode devices includes a quantum well region characterized byan electron wave function and a hole wave function. The electron wavefunction and the hole wave function are substantially overlapped withina predetermined spatial region of the quantum well. In a preferredembodiment, the one or more light emitting diode device comprises atleast a blue LED device emitting substantially polarized blue light at arange from about 480 nanometers to about 570 nanometers.

In a specific embodiment, the present device also has a thickness 1615of one or more entities formed overlying the light emitting diodedevices and within an interior region of enclosure 1617, which will bedescribed in more detail below. The entities are excited by thesubstantially polarized emission and emit electromagnetic radiation ofsecond wavelengths. In a preferred embodiment, the plurality of entitiesemits substantially yellow light from an interaction with the bluelight. The phosphor is about five microns or less thick

In a specific embodiment, entities comprises a phosphor or phosphorblend selected from (Y,Gd,Tb,Sc,Lu,La)₃(Al,Ga,In)₅O₁₂:Ce³⁺,SrGa₂S₄:Eu²⁺, SrS:Eu², and colloidal quantum dot thin films comprisingCdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe. In other embodiments, the devicemay include a phosphor capable of emitting substantially red light. Suchphosphor is be selected from (Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺;Ca_(1-x)Mo_(1-y)Si_(y)O₄: where 0.05≦x≦0.5, 0≦y≦0.1;(Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺; SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺;(Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺ (MFG);(Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)Xwherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the light emitting diode device comprises atleast a violet LED device capable of emitting electromagnetic radiationat a range from about 380 nanometers to about 440 nanometers and theentities are capable of emitting substantially white light, thesubstantially polarized emission being violet light. Other colored LEDsmay also be used or combined according to a specific embodiment.

In a specific embodiment, the entities comprise a blend of phosphorscapable of emitting substantially blue light, substantially green light,and substantially red light. As an example, the blue emitting phosphoris selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺, Mn²⁺; Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺, Mn²⁺;(Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺; 2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺;Sr₂Si₃O₈*2SrCl₂:Eu²⁺; (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; Sr4Al₁₄O₂₅:Eu²⁺(SAE); BaAl₈O₁₃:Eu²⁺; and mixtures thereof. As an example, the greenphosphor is selected from the group consisting of(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺,Tb³; Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺;(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,ln)₂S₄:Eu²⁺; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺, Tb³;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof. As an example, thered phosphor is selected from the group consisting of(Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1;(Y,Gd,Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.

In a specific embodiment, the present packaged device includes anenclosure 1617. The enclosure can be made of a suitable material such asan optically transparent plastic, glass, or other material. As alsoshown, the enclosure has a suitable shape 1619 which can be annular,circular, egg-shaped, trapezoidal, or a combination of these shapes.Depending upon the embodiment, the enclosure with suitable shape andmaterial is configured to facilitate and even optimize transmission ofelectromagnetic radiation from the LED device through the surface regionof the enclosure. In a specific embodiment, the enclosure comprises aninterior region and an exterior region with a volume defined within theinterior region. The volume is open and filled with an inert gas or airto provide an optical path between the LED device or devices and thesurface region of the enclosure. In a specific embodiment, the enclosurealso has a thickness and fits around a base region of the substrate.

In a specific embodiment, the plurality of entities is suspended in asuitable medium. An example of such a medium can be a silicone, glass,spin on glass, plastic, polymer, which is doped, metal, or semiconductormaterial, including layered materials, and/or composites, among others.Depending upon the embodiment, the medium including polymers begins as afluidic state, which fills an interior region of the enclosure. Themedium fills and can seal the LED device or devices. The medium is thencured and fills in a substantially stable state. The medium ispreferably optically transparent, but can also be selectivelytransparent and/or translucent. In addition, the medium, once cured, issubstantially inert. In a preferred embodiment, the medium has a lowabsorption capability to allow a substantial portion of theelectromagnetic radiation generated by the LED device to traversethrough the medium and be outputted through the enclosure. In otherembodiments, the medium can be doped or treated to selectively filter,disperse, or influence selected wavelengths of light. As an example, themedium can be treated with metals, metal oxides, dielectrics, orsemiconductor materials, and/or combinations of these materials, and thelike.

FIGS. 17 through 20 illustrate a simplified method of assembling thelight emitting device of FIG. 16 according to an embodiment of thepresent invention.

FIG. 21 is a simplified diagram of a yet an alternative packaged lightemitting device using an optical path to a plane region according to anembodiment of the present invention. As shown, the packaged lightemitting device includes one or more entities formed within an interiorregion of enclosure 2117.

FIG. 22 is a simplified diagram of a yet an alternative packaged lightemitting device using an optical path to a plane region according to anembodiment of the present invention The packaged light emitting deviceincludes entities formed within a thickness of enclosure 2217.

Although the above has been described in terms of an embodiment of aspecific package, there can be many variations, alternatives, andmodifications. As an example, the LED device can be configured in avariety of packages such as cylindrical, surface mount, power, lamp,flip-chip, star, array, strip, or geometries that rely on lenses(silicone, glass) or sub-mounts (ceramic, silicon, metal, composite).Alternatively, the package can be any variations of these packages.

In other embodiments, the packaged device can include other types ofoptical and/or electronic devices. As an example, the optical devicescan be OLED, a laser, a nanoparticle optical device, and others. Inother embodiments, the electronic device can include an integratedcircuit, a sensor, a micro-machined electronic mechanical system, or anycombination of these, and the like.

In a specific embodiment, the packaged device can be coupled to arectifier to convert alternating current power to direct current, whichis suitable for the packaged device. The rectifier can be coupled to asuitable base, such as an Edison screw such as E27 or E14, bipin basesuch as MR16 or GU5.3, or a bayonet mount such as GU10, or others. Inother embodiments, the rectifier can be spatially separated from thepackaged device.

Additionally, the present packaged device can be provided in a varietyof applications. In a preferred embodiment, the application is generallighting, which includes buildings for offices, housing, outdoorlighting, stadium lighting, and others. Alternatively, the applicationscan be for display, such as those used for computing applications,televisions, flat panels, micro-displays, and others. Still further, theapplications can include automotive, gaming, and others.

In a specific embodiment, the present devices are configured to achievespatial uniformity. That is, diffusers can be added to the encapsulantto achieve spatial uniformity. Depending upon the embodiment, thediffusers can include TiO₂, CaF₂, SiO₂, CaCO₃, BaSO₄, and others, whichare optically transparent and have a different index than theencapsulant causing the light to reflect, refract, and scatter to makethe far field pattern more uniform. Of course, there can be othervariations, modifications, and alternatives.

As used herein, the term GaN substrate is associated with GroupIII-nitride based materials including GaN, InGaN, AlGaN, or other GroupIII containing alloys or compositions that are used as startingmaterials. Such starting materials include polar GaN substrates (i.e.,substrate where the largest area surface is nominally an (h k l) planewherein h=k=0, and l is non-zero), non-polar GaN substrates (i.e.,substrate material where the largest area surface is oriented at anangle ranging from about 80-100 degrees from the polar orientationdescribed above towards an (h k l) plane wherein l=0, and at least oneof h and k is non-zero) or semi-polar GaN substrates (i.e., substratematerial where the largest area surface is oriented at an angle rangingfrom about +0.1 to 80 degrees or 110-179.9 degrees from the polarorientation described above towards an (h k l) plane wherein l=0, and atleast one of h and k is non-zero).

While the above is a full description of the specific embodiments,various modifications, alternative constructions and equivalents may beused. Additionally, the above has been generally described in terms ofentities that may be phosphor materials or phosphor like materials, butit would be recognized that other “energy-converting luminescentmaterials,” which may include one or more phosphors, semiconductors,semiconductor nanoparticles (“quantum dots”), organic luminescentmaterials, and the like, and combinations of them, can also be used. Theenergy converting luminescent materials can generally be wavelengthconverting material and/or materials or thicknesses of them.Furthermore, the above has been generally described in electromagneticradiation that directly emits and interacts with the wavelengthconversion materials, but it would be recognized that theelectromagnetic radiation can be reflected and then interact with thewavelength conversion materials or a combination of reflection anddirect incident radiation. The specification describes specific galliumand nitrogen containing surface orientations, but it would be recognizedthat other plane orientations can be used. Therefore, the abovedescription and illustrations should not be taken as limiting the scopeof the present invention which is defined by the appended claims.

1-39. (canceled)
 40. A method for fabricating a light emitting diodedevice comprising: providing a substrate member comprising a firstsurface region; providing one or more light emitting diode devicesoverlying the first surface region, at least one of the light emittingdiode devices being fabricated on a semipolar or nonpolar GaN containingdevice substrate, the device substrate comprising a bulk gallium nitridesubstrate, the at least one or more light emitting diode devicesfabricated on the semipolar or nonpolar GaN containing device substrateemitting substantially polarized emission of one or more firstwavelengths; coupling an optically transparent member to the one or morelight emitting diode devices such that an optical path is providedbetween the one or more light emitting diode devices and the opticallytransparent member; and forming a thickness of one or more entitiesformed within a vicinity of the optically transparent member, one ormore of the entities being excited by the substantially polarizedemission to emit electromagnetic radiation at one or more secondwavelengths; wherein the bulk gallium nitride substrate has adislocation density in the plane of the large-area surface that is lessthan 5×10⁶ cm⁻².
 41. The method of claim 40, wherein at least one of thelight emitting diode devices comprises a quantum well region, thequantum well region being characterized by an electron wave function anda hole wave function, the electron wave function and the hole wavefunction being substantially overlapped within a predetermined spatialregion of the quantum well region.
 42. The method of claim 40, whereinthe thickness of the one or more entities is formed overlying a firstside of the optically transparent member, the first side facing the oneor more of the light emitting diode devices.
 43. The method of claim 40,wherein the one or more light emitting diode devices comprise at least ablue LED device, the substantially polarized emission being blue light.44. The method of claim 40, wherein the one or more light emitting diodedevices comprise at least a blue LED device capable of emittingelectromagnetic radiation at a wavelength range from about 430nanometers to about 490 nanometers, the substantially polarized emissionbeing blue light.
 45. The method of claim 40, wherein the one or morelight emitting diode devices comprise at least a blue LED device capableof emitting electromagnetic radiation at a range from about 430nanometers to about 490 nanometers and the one or more entities iscapable of emitting substantially yellow light, the substantiallypolarized emission being blue light.
 46. The method of claim 45, whereinthe one or more entities comprises a phosphor or phosphor blend selectedfrom one or more of (Y,Gd,Tb,Sc,Lu,La)₃(Al,Ga,In)₅O₁₂:Ce³⁺,SrGa₂S₄:Eu²⁺, SrS:Eu²⁺, and colloidal quantum dot thin films comprisingCdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe.
 47. The method of claim 45,further comprising a phosphor capable of emitting substantially redlight, wherein the phosphor is selected from one or more of the groupconsisting of (Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1;(Y,Gd,Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆, where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.
 48. The method of claim 40, wherein the one or more lightemitting diode devices comprise at least a violet LED device capable ofemitting electromagnetic radiation at a range from about 380 nanometersto about 440 nanometers and the one or more entities are capable ofemitting substantially white light, the substantially polarized emissionbeing violet light.
 49. The method of claim 40, wherein the one or moreentities comprise a blend of wavelength converting materials capable ofemitting substantially blue light, substantially green light, andsubstantially red light.
 50. The method of claim 49, wherein the blueemitting phosphor is selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺, Mn²⁺; Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺, Mn²⁺;(Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺; 2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺;Sr₂Si₃O₈*2SrCl₂:Eu²⁺; (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺(SAE); BaAl₈O₁₃:Eu²⁺; and mixtures thereof.
 51. The method of claim 49,wherein the green phosphor is selected from the group consisting of(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺,Tb³⁺; Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺;(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,ln)₂S₄:Eu²⁺; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺, Tb³;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof.
 52. The method ofclaim 49, wherein the red phosphor is selected from the group consistingof (Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.
 53. The method of claim 40, wherein the one or more entitiesbeing a plurality of wavelength converting entities are selected from ared emitting wavelength converting material, a green emitting wavelengthconverting material, a blue emitting wavelength converting material, anda yellow emitting wavelength converting material.
 54. The method ofclaim 40, wherein the thickness of the one or more entities is providedby at least one of electrophoretic deposition, plating, sputtering,spraying, dipping, and dispensing.
 55. The method of claim 40, whereinthe one or more light emitting diode devices comprise two light emittingdevices.
 56. The method of claim 40, wherein the bulk gallium nitridesubstrate was formed by slicing from a boule that was grown by hydridevapor epitaxy or ammonothermally.
 57. The light emitting device of claim40, wherein the thickness of the one or more entities is formedoverlying the one or more light emitting diode devices.
 58. The lightemitting device of claim 40, further comprising an enclosure, whereinthe enclosure has a shape chosen from among annular, circular,egg-shaped, trapezoidal, or a combination thereof.
 59. The lightemitting device of claim 40, wherein the device is packaged and iscoupled to a rectifier.
 60. The light emitting device of claim 40,further comprising a diffuser, the diffuser comprising at least one ofTiO₂, CaF₂, SiO₂, CaCO₃, and BaSO₄.
 61. A method for manufacturing alight emitting device comprising: providing a substrate member having afirst surface; providing at least one light emitting diode overlying thefirst surface emitting a substantially polarized emission of firstwavelengths, the light emitting diode comprising a device substratecomprising a semipolar or nonpolar bulk gallium nitride substrate;coupling an optically transparent member to the at least one lightemitting diode such that an optical path is between the at least onelight emitting diode and the optically transparent; and forming a blendof phosphors coupled to the optical transparent member, the phosphorsbeing excited by the substantially polarized emission of firstwavelengths to thereby emit electromagnetic radiation at secondwavelengths; wherein the substantially polarized emission of firstwavelengths comprises blue light and the phosphor blend emitselectromagnetic radiation at second wavelengths comprising yellow andred.
 62. A method of using a light emitting device comprising: providinga substrate member having a first surface, at least one light emittingdiode overlying the first surface emitting a substantially polarizedemission of first wavelengths, the light emitting diode comprising adevice substrate comprising a semipolar or nonpolar bulk gallium nitridesubstrate, an optically transparent member coupled to the at least onelight emitting diode, an optical path between the at least one lightemitting diode and the optically transparent; and a blend of phosphors;and subjecting the phosphors to excite such phosphors by thesubstantially polarized emission of first wavelengths to thereby emitelectromagnetic radiation at second wavelengths; wherein thesubstantially polarized emission of first wavelengths comprises violetlight and the phosphor blend emits electromagnetic radiation at secondwavelengths comprising blue, green, and red.
 63. A method for using alight emitting device comprising: providing a substrate member having afirst surface, at least one light emitting diode overlying the firstsurface emitting a substantially polarized emission of firstwavelengths, the light emitting diode comprising a device substratecomprising a semipolar or nonpolar bulk gallium nitride substrate, anoptically transparent member coupled to the at least one light emittingdiode, an optical path between the at least one light emitting diode andthe optically transparent; and a blend of phosphors; and subjecting thephosphors to be excited by the substantially polarized emission of firstwavelengths to thereby emit electromagnetic radiation at secondwavelengths; wherein the substantially polarized emission of firstwavelengths comprises blue light and the phosphor blend emitselectromagnetic radiation at second wavelengths comprising green andred.
 64. A method of fabricating a light emitting device comprising:providing a substrate member comprising a first surface region;providing one or more light emitting diode devices overlying the firstsurface region, at least one of the light emitting diode devices beingfabricated on a semipolar or nonpolar GaN containing device substrate,the device substrate comprising a bulk gallium nitride substrate, the atleast one or more light emitting diode devices fabricated on thesemipolar or nonpolar GaN containing device substrate emittingsubstantially polarized emission of one or more first wavelengths; andcoupling an optically transparent member to the one or more lightemitting diode devices such that an optical path is provided between theone or more light emitting diode devices and the optically transparentmember and such that a thickness of one or more entities is formedwithin a vicinity of the optically transparent member, one or more ofthe entities being excited by the substantially polarized emission toemit electromagnetic radiation at one or more second wavelengths;wherein a crystallographic orientation of the device substrate is within±5 degrees of the {1 −1 0 0} m plane, the {1 1 −2 0} a plane, the {1 1−2 2} plane, the {2 0 −2 ±1} plane, the {1 −1 0 ±1} plane, the {1 −1 0−±2} plane, or the {1 −1 0 ±3} plane.
 65. The method of claim 64,wherein at least one of the light emitting diode devices comprises aquantum well region, the quantum well region being characterized by anelectron wave function and a hole wave function, the electron wavefunction and the hole wave function being substantially overlappedwithin a predetermined spatial region of the quantum well region. 66.The method of claim 64, wherein the thickness of the one or moreentities is formed overlying a first side of the optically transparentmember, the first side facing the one or more of the light emittingdiode devices.
 67. The method of claim 64, wherein the one or more lightemitting diode devices comprise at least a blue LED device, thesubstantially polarized emission being blue light.
 68. The method ofclaim 64, wherein the one or more light emitting diode devices compriseat least a blue LED device capable of emitting electromagnetic radiationat a wavelength range from about 430 nanometers to about 490 nanometers,the substantially polarized emission being blue light.
 69. The method ofclaim 64, wherein the one or more light emitting diode devices compriseat least a blue LED device capable of emitting electromagnetic radiationat a range from about 430 nanometers to about 490 nanometers and the oneor more entities is capable of emitting substantially yellow light, thesubstantially polarized emission being blue light.
 70. The method ofclaim 69, wherein the one or more entities comprises a phosphor orphosphor blend selected from one or more of(Y,Gd,Tb,Sc,Lu,La)₃(Al,Ga,In)₅O₁₂:Ce³⁺, SrGa₂S₄:Eu²⁺, SrS:Eu²⁺, andcolloidal quantum dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe,or CdTe.
 71. The method of claim 69, further comprising a phosphorcapable of emitting substantially red light, wherein the phosphor isselected from one or more of the group consisting of(Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺, Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.
 72. The method of claim 64, wherein the one or more lightemitting diode devices comprise at least a violet LED device capable ofemitting electromagnetic radiation at a range from about 380 nanometersto about 440 nanometers and the one or more entities are capable ofemitting substantially white light, the substantially polarized emissionbeing violet light.
 73. The method of claim 64, wherein the one or moreentities comprise a blend of wavelength converting materials capable ofemitting substantially blue light, substantially green light, andsubstantially red light.
 74. The method of claim 73, wherein the blueemitting phosphor is selected from the group consisting of(Ba,Sr,Ca)₅(PO₄)₃(Cl,F,Br,OH):Eu²⁺, Mn²⁺; Sb³⁺,(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺; (Ba,Sr,Ca)BPO₅:Eu²⁺, Mn²⁺;(Sr,Ca)₁₀(PO₄)₆*nB₂O₃:Eu²⁺; 2SrO*0.84P₂O₅*0.16B₂O₃:Eu²⁺;Sr₂Si₃O₈*2SrCl₂:Eu²⁺; (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; Sr₄Al₁₄O₂₅:Eu²⁺(SAE); BaAl₈O₁₃:Eu²⁺; and mixtures thereof.
 75. The method of claim 73,wherein the green phosphor is selected from the group consisting of(Ba,Sr,Ca)MgAl₁₀O₁₇:Eu²⁺, Mn²⁺ (BAMn); (Ba,Sr,Ca)Al₂O₄:Eu²⁺;(Y,Gd,Lu,Sc,La)BO₃:Ce³⁺,Tb³; Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺;(Ba,Sr,Ca)₂SiO₄:Eu²⁺; (Ba,Sr,Ca)₂(Mg,Zn)Si₂O₇:Eu²⁺;(Sr,Ca,Ba)(Al,Ga,ln)₂S₄:Eu²⁺; (Y,Gd,Tb,La,Sm,Pr,Lu)₃(Al,Ga)₅O₁₂:Ce³⁺;(Ca,Sr)₈(Mg,Zn)(SiO₄)₄Cl₂:Eu²⁺, Mn²⁺ (CASI); Na₂Gd₂B₂O₇:Ce³⁺, Tb³;(Ba,Sr)₂(Ca,Mg,Zn)B₂O₆:K,Ce,Tb; and mixtures thereof.
 76. The method ofclaim 73, wherein the red phosphor is selected from the group consistingof (Gd,Y,Lu,La)₂O₃:Eu³⁺, Bi³⁺; (Gd,Y,Lu,La)₂O₂S:Eu³⁺, Bi³⁺;(Gd,Y,Lu,La)VO₄:Eu³⁺, Bi³⁺; Y₂(O,S)₃:Eu³⁺; Ca_(1-x)Mo_(1-y)Si_(y)O₄:where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)₅Eu(W,Mo)O₄; (Ca,Sr)S:Eu²⁺;SrY₂S₄:Eu²⁺; CaLa₂S₄:Ce³⁺; (Ca,Sr)S:Eu²⁺; 3.5MgO*0.5MgF₂*GeO₂:Mn⁴⁺(MFG); (Ba,Sr,Ca)Mg_(x)P₂O₇:Eu²⁺, Mn²⁺; (Y,Lu)₂WO₆:Eu³⁺; Mo⁶⁺;(Ba,Sr,Ca)₃Mg_(x)Si₂O₈:Eu²⁺, Mn²⁺, wherein 1<x≦2;(RE_(1-y)Ce_(y))Mg_(2-x)Li_(x)Si_(3-x)P_(x)O₁₂, where RE is at least oneof Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1;(Y,Gd,Lu,La)_(2-x)Eu_(x)W_(1-y)Mo_(y)O₆,where 0.5≦x.≦1.0, 0.01≦y≦1.0;(SrCa)_(1-x)Eu_(x)Si₅N₈, where 0.01≦x≦0.3; SrZnO₂:Sm⁺³; M_(m)O_(n)X,wherein M is selected from the group of Sc, Y, a lanthanide, an alkaliearth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, andwherein the lanthanide doping level can range from 0.1 to 40% spectralweight; and Eu³⁺ activated phosphate or borate phosphors; and mixturesthereof.
 77. The method of claim 64, wherein the one or more entitiesbeing a plurality of wavelength converting entities are selected from ared emitting wavelength converting material, a green emitting wavelengthconverting material, a blue emitting wavelength converting material, anda yellow emitting wavelength converting material.
 78. The method ofclaim 64, wherein the thickness of the one or more entities is providedby at least one of electrophoretic deposition, plating, sputtering,spraying, dipping, and dispensing.
 79. The method of claim 64, whereinthe one or more light emitting diode devices comprise two light emittingdevices.
 80. The method of claim 64, wherein the bulk gallium nitridesubstrate was formed by slicing from a boule that was grown by hydridevapor epitaxy or ammonothermally.
 81. The method of claim 64, whereinthe thickness of the one or more entities is formed overlying the one ormore light emitting diode devices.
 82. The method of claim 64, furthercomprising an enclosure, wherein the enclosure has a shape chosen fromamong annular, circular, egg-shaped, trapezoidal, or a combinationthereof.
 83. The method of claim 64, wherein the device is packaged andis coupled to a rectifier.
 84. The method of claim 64, furthercomprising a diffuser, the diffuser comprising at least one of TiO₂,CaF₂, SiO₂, CaCO₃, and BaSO₄.